POINT-DEFECT, CARBON AND OXYGEN COMPLEXING IN POLYCRYSTALLINE SILICON

被引：14

作者：

KALEJS, JP

机构：

[1] Mobil Solar Energy Corporation, Billerica, MA 01821

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90337-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Relationships among point defects, carbon and oxygen in formation of microdefects in silicon crystals grown from the melt are examined for polycrystalline material. Crystal growth variables influencing microdefect formation mechanisms are discussed in detail for the case of silicon sheet grown by the edge-defined film-fed growth (EFG) technique. Experimental evidence for intrinsic point defect participation with carbon and oxygen to form complexes is presented and candidates proposed for nucleation sites for several types of carbon-related and vacancy-based microdefects in the as-grown EFG silicon lattice.

引用

页码：298 / 303

页数：6

共 18 条

[1]

ABE T, 1990, SEMICONDUCTOR SILICO, P105

[2]

AST DG, 1987, SILICON PROCESSING P, V1, pCH7

[3]

DUBE C, COMMUNICATION

[4]

FOELL H, 1977, J CRYST GROWTH, V52, P907

[5]

GLEICHMANN R, 1985, PHILOS MAG A, V51, P449, DOI 10.1080/01418618508237566

[6]

GOESELE U, COMMUNICATION

[7] MELT-INTERFACE MECHANISM FOR GENERATION OF SILICON-CARBIDE MICRODEFECTS IN SILICON [J].

KALEJS, JP ;

CHALMERS, B .

JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :487-492

[8]

KALEJS JP, 1987, SILICON PROCESSING P, V2, pCH4

[9]

KHATTAK CP, 1987, SILICON PROCESSING P, V2

[10]

KHATTAK CP, 1987, SILICON PROCESSING P, V1

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