MELT-INTERFACE MECHANISM FOR GENERATION OF SILICON-CARBIDE MICRODEFECTS IN SILICON

被引：19

作者：

KALEJS, JP ^{[1
]}

CHALMERS, B ^{[1
]}

机构：

[1] HARVARD UNIV,CAMBRIDGE,MA 02138

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 79卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90481-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：487 / 492

页数：6

共 15 条

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[8] INFLUENCE OF HIGH-TEMPERATURE ANNEALING ON PERFORMANCE OF EDGE-DEFINED FILM-FED GROWTH-SILICON RIBBON SOLAR-CELLS [J].

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LADD, LA .

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[9]

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