INFLUENCE OF HIGH-TEMPERATURE ANNEALING ON PERFORMANCE OF EDGE-DEFINED FILM-FED GROWTH-SILICON RIBBON SOLAR-CELLS

被引：9

作者：

KALEJS, JP

LADD, LA

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 05期

关键词：

D O I：

10.1063/1.95307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：540 / 542

页数：3

共 14 条

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[5]

GLEICHMANN R, UNPUB

[6] CHARACTERISTICS OF EFG RIBBON SOLAR-CELLS FABRICATED BY THE ION-IMPLANTATION AND PULSED ELECTRON-BEAM ANNEALING TECHNIQUE [J].

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SOLAR CELLS, 1984, 11 (01) :29-39

[7]

HO CT, 1981, PHYS STATUS SOLIDI A, V67, P103

[8]

KALEJS JP, 1980, P S ELECTRONIC OPTIC, P242

[9]

LADD LA, UNPUB

[10] OXYGEN-INDUCED RECOMBINATION CENTERS IN AS-GROWN CZOCHRALSKI SILICON-CRYSTALS [J].

NAUKA, K ;

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APPLIED PHYSICS LETTERS, 1983, 43 (03) :241-243

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