OXYGEN-INDUCED RECOMBINATION CENTERS IN AS-GROWN CZOCHRALSKI SILICON-CRYSTALS

被引：23

作者：

NAUKA, K

GATOS, HC

LAGOWSKI, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 03期

关键词：

D O I：

10.1063/1.94312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：241 / 243

页数：3

共 12 条

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[5]

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[8]

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[10] THERMALLY ACTIVATED OXYGEN DONORS IN SI [J].

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