DETERMINATION OF OXYGEN CONCENTRATION PROFILES IN SILICON-CRYSTALS OBSERVED BY SCANNING IR ABSORPTION USING SEMICONDUCTOR-LASER

被引：24

作者：

OHSAWA, A

HONDA, K

OHKAWA, S

UEDA, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 02期

关键词：

D O I：

10.1063/1.91409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：147 / 148

页数：2

共 11 条

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[4]

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[9] NEAR IR ABSORPTION IN FILMS OF SILICON CONTAINING OXYGEN [J].

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[10]

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