ELIMINATION OF STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS

[1] DEKOCK AJR, 1973, PHILIPS RES REPT S1

[2] ION-IMPLANTATION DAMAGE GETTERING EFFECT IN SILICON PHOTODIODE ARRAY CAMERA TARGET [J]. APPLIED PHYSICS LETTERS, 1973, 22 (05) : 238 - 240

[3] Lawrence J. E., 1969, Semiconductor silicon, P596

[4] DIFFUSION GETTERING OF AU AND CU IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) : 786 - 796

[5] MOERSCHEL K, COMMUNICATION

[6] ELIMINATION OF PROCESS-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SI WAFERS .2. SI-3 N-4 PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 565 - 570

[7] CHARACTERIZATION OF SWIRL DEFECTS IN FLOATING-ZONE SILICON-CRYSTALS [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 30 (01) : 117 - 124

[8] OXIDATION-INDUCED STACKING-FAULTS IN SILICON .1. NUCLEATION PHENOMENON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 263 - 271

[9] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1725 - 1729

[10] ETCH PIT STUDIES OF GAP LIQUID-PHASE EPITAXIAL LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) : 673 - 678

[1] DEKOCK AJR, 1973, PHILIPS RES REPT S1

[2] ION-IMPLANTATION DAMAGE GETTERING EFFECT IN SILICON PHOTODIODE ARRAY CAMERA TARGET [J]. APPLIED PHYSICS LETTERS, 1973, 22 (05) : 238 - 240

[3] Lawrence J. E., 1969, Semiconductor silicon, P596

[4] DIFFUSION GETTERING OF AU AND CU IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) : 786 - 796

[5] MOERSCHEL K, COMMUNICATION

[6] ELIMINATION OF PROCESS-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SI WAFERS .2. SI-3 N-4 PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 565 - 570

[7] CHARACTERIZATION OF SWIRL DEFECTS IN FLOATING-ZONE SILICON-CRYSTALS [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 30 (01) : 117 - 124

[8] OXIDATION-INDUCED STACKING-FAULTS IN SILICON .1. NUCLEATION PHENOMENON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 263 - 271

[9] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1725 - 1729

[10] ETCH PIT STUDIES OF GAP LIQUID-PHASE EPITAXIAL LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) : 673 - 678