METHOD TO MEASURE THE PRECIPITATED AND TOTAL OXYGEN CONCENTRATION IN SILICON

[1] ABE T, 1981, SEMICONDUCTOR SILICO, P54

[2] DETERMINATION OF PARTS PER BILLION OF OXYGEN IN SILICON [J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1431 - &

[3] ELECTRICALLY ACTIVE STACKING-FAULTS IN CMOS INTEGRATED-CIRCUITS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2689 - 2696

[4] FOLL H, 1977, SEMICONDUCTOR SILICO, P565

[5] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J]. SOLID-STATE ELECTRONICS, 1973, 16 (08) : 887 - 893

[6] Harrick N.J., 1967, INTERNAL REFLECTION

[7] HROSTOWSKI HJ, 1959, J PHYS CHEM SOLIDS, V9, P217

[8] INFRARED-ABSORPTION SPECTRA OF SIO2 PRECIPITATES OF VARIOUS SHAPES IN SILICON - CALCULATED AND EXPERIMENTAL [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5945 - 5948

[9] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 53 - 55

[10] ORIGIN AND CONTROL OF MATERIAL DEFECTS IN SILICON VLSI TECHNOLOGIES - AN OVERVIEW [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 475 - 487

[1] ABE T, 1981, SEMICONDUCTOR SILICO, P54

[2] DETERMINATION OF PARTS PER BILLION OF OXYGEN IN SILICON [J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1431 - &

[3] ELECTRICALLY ACTIVE STACKING-FAULTS IN CMOS INTEGRATED-CIRCUITS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2689 - 2696

[4] FOLL H, 1977, SEMICONDUCTOR SILICO, P565

[5] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J]. SOLID-STATE ELECTRONICS, 1973, 16 (08) : 887 - 893

[6] Harrick N.J., 1967, INTERNAL REFLECTION

[7] HROSTOWSKI HJ, 1959, J PHYS CHEM SOLIDS, V9, P217

[8] INFRARED-ABSORPTION SPECTRA OF SIO2 PRECIPITATES OF VARIOUS SHAPES IN SILICON - CALCULATED AND EXPERIMENTAL [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5945 - 5948

[9] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 53 - 55

[10] ORIGIN AND CONTROL OF MATERIAL DEFECTS IN SILICON VLSI TECHNOLOGIES - AN OVERVIEW [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 475 - 487