KINETIC SMOOTHENING - GROWTH THICKNESS DEPENDENCE OF THE INTERFACE WIDTH OF THE SI(001)/SIO2 INTERFACE

被引：10

作者：

DAWSON, JL ^{[1
]}

KRISCH, K ^{[1
]}

EVANSLUTTERODT, KW ^{[1
]}

TANG, MT ^{[1
]}

MANCHANDA, L ^{[1
]}

GREEN, ML ^{[1
]}

BRASEN, D ^{[1
]}

HIGASHI, GS ^{[1
]}

BOONE, T ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.359410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using x-ray diffraction techniques, we measure the root-mean-square width of the buried crystalline/amorphous Si(001)/SiO2 interface, as a function of oxide thickness. We find that the interface width decreases with increasing oxide thickness; the oxide growth process kinetically smoothens the buried interface. We also find a difference between the rate of smoothing for wet and dry oxides. © 1995 American Institute of Physics.

引用

页码：4746 / 4749

页数：4

共 7 条

[1]

COWLEY JM, 1984, DIFFRACTION PHYSICS

[2] DYNAMIC SCALING OF GROWING INTERFACES [J].