SILICON DIAPHRAGM PRESSURE SENSORS FABRICATED BY ANODIC-OXIDATION ETCH-STOP

被引：17

作者：

HIRATA, M

SUZUKI, K

TANIGAWA, H

机构：

来源：

SENSORS AND ACTUATORS | 1988年 / 13卷 / 01期

关键词：

D O I：

10.1016/0250-6874(88)85029-7

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

收藏

页码：63 / 70

页数：8

相关论文

共 10 条

[1] ETHYLENE DIAMINE-PYROCATECHOL-WATER MIXTURE SHOWS ETCHING ANOMALY IN BORON-DOPED SILICON
BOHG, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 401 - &
[2] PRESSURE SENSITIVITY IN ANISOTROPICALLY ETCHED THIN-DIAPHRAGM PRESSURE SENSORS
CLARK, SK
WISE, KD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) : 1887 - 1896
[3] HIRATA M, 1985, JUN TRANSD 85, P287
[4] TEMPERATURE SENSITIVITY IN SILICON PIEZORESISTIVE PRESSURE TRANSDUCERS
KIM, SC
WISE, KD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 802 - 810
[5] ELLIPSOMETRIC STUDY OF THE ETCH-STOP MECHANISM IN HEAVILY DOPED SILICON
PALIK, ED
BERMUDEZ, VM
GLEMBOCKI, OJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) : 135 - 141
[6] SAMAUN S, 1973, IEEE T BIOMEDICAL EN, V20, P101
[7] SUZUKI S, 1985, DEC IEDM, P137
[8] RECENT DEVELOPMENTS IN SEMICONDUCTOR PIEZORESISTIVE DEVICES
TUFTE, ON
LONG, D
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (04) : 323 - 338
[9] FIELD ASSISTED GLASS-METAL SEALING
WALLIS, G
POMERANT.DI
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 3946 - &
[10] WISE KD, 1978, DEC IEDM, P96