TEMPERATURE SENSITIVITY IN SILICON PIEZORESISTIVE PRESSURE TRANSDUCERS

被引：64

作者：

KIM, SC ^{[1
]}

WISE, KD ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT & COMP ENGN,ELECTRON PHYS LAB,ANN ARBOR,MI 48109

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 07期

关键词：

D O I：

10.1109/T-ED.1983.21213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：802 / 810

页数：9

共 25 条

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[7] A GRAPHICAL REPRESENTATION OF THE PIEZORESISTANCE COEFFICIENTS IN SILICON [J].

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[9]

KIM SC, 1981, THESIS U MICHIGAN

[10]

KO WH, 1979, IEEE T ELECTRON DEV, V26, P1896, DOI 10.1109/T-ED.1979.19793

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