A GRAPHICAL REPRESENTATION OF THE PIEZORESISTANCE COEFFICIENTS IN SILICON

被引:592
作者
KANDA, Y
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D O I
10.1109/T-ED.1982.20659
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:64 / 70
页数:7
相关论文
共 15 条
[1]  
Bir GL., 1974, SYMMETRY STRAIN INDU
[2]  
DEAN M, 1962, SEMICONDUCTOR STRAIN
[3]   TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J].
HERRING, C ;
VOGT, E .
PHYSICAL REVIEW, 1956, 101 (03) :944-961
[4]   EFFECT OF STRESS ON GERMANIUM AND SILICON P-N JUNCTIONS [J].
KANDA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) :475-&
[5]   EFFECT OF MECHANICAL-STRESS ON OFFSET VOLTAGES OF HALL DEVICES IN SI IC [J].
KANDA, Y ;
MIGITAKA, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (02) :K115-K118
[6]   DESIGN CONSIDERATION FOR HALL DEVICES IN SI IC [J].
KANDA, Y ;
MIGITAKA, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01) :K41-K44
[7]   THE EFFECTS OF ELASTIC DEFORMATION ON THE ELECTRICAL CONDUCTIVITY OF SEMICONDUCTORS [J].
KEYES, RW .
SOLID STATE PHYSICS, 1960, 11 :149-221
[8]  
MASON WP, 1960, 15 AM C PREPR INSTR, pNY60
[9]   PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J].
SMITH, CS .
PHYSICAL REVIEW, 1954, 94 (01) :42-49
[10]  
Smith R. A., 1959, SEMICONDUCTORS