CHEMICAL-REACTIONS AT THE SI GAAS(110) AND SI INP(110) INTERFACES - EFFECTS ON VALENCE-BAND DISCONTINUITY MEASUREMENTS

被引：7

作者：

LIST, RS

KENDELEWICZ, T

WILLIAMS, MD

MCCANTS, CE

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575359

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1543 / 1547

页数：5

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