ON THE FORMATION OF SEMICONDUCTOR INTERFACES

被引:173
作者
FLORES, F
TEJEDOR, C
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1987年 / 20卷 / 02期
关键词
D O I
10.1088/0022-3719/20/2/001
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:145 / 175
页数:31
相关论文
共 122 条
[1]   UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES [J].
ALLEN, RE ;
DOW, JD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :383-387
[2]   THEORY OF SURFACE-DEFECT STATES AND SCHOTTKY-BARRIER HEIGHTS - APPLICATION TO INAS [J].
ALLEN, RE ;
HUMPHREYS, TJ ;
DOW, JD ;
SANKEY, OF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :449-452
[3]  
ANDERSON RL, 1960, THESIS SYRACUSE U NE
[4]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[5]   ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION [J].
BATEY, J ;
WRIGHT, SL .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :200-209
[6]  
BOLMONT D, 1984, J PHYSIQUE C, V5, P419
[7]  
BRAWN, 1874, PAPP ANN, V153, P556
[8]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[9]   REDUCTION OF SILICON-ALUMINUM INTERDIFFUSION BY IMPROVED SEMICONDUCTOR SURFACE ORDERING [J].
BRILLSON, LJ ;
SLADE, ML ;
KATNANI, AD ;
KELLY, M ;
MARGARITONDO, G .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :110-112
[10]   CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION [J].
BRILLSON, LJ ;
BRUCKER, CF ;
KATNANI, AD ;
STOFFEL, NG ;
MARGARITONDO, G .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :784-786