POLAR-ON-NONPOLAR EPITAXY

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] AKIYAMA M, 1986 SPRING M MAT RE

[3] ASPNES DE, IN PRESS

[4] BRINGANS RD, 1986 SPRING M MAT RE

[5] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 397 - 399

[6] FISCHER R, IN PRESS

[7] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) : 206 - 213

[8] FISCHER RJ, 1985, J APPL PHYS, V45, P374

[9] POLAR HETEROJUNCTION INTERFACES [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4402 - 4410

[10] STRUCTURAL AND ELECTRONIC PROPERTIES OF STEPPED SEMICONDUCTOR SURFACES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 389 - 396

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] AKIYAMA M, 1986 SPRING M MAT RE

[3] ASPNES DE, IN PRESS

[4] BRINGANS RD, 1986 SPRING M MAT RE

[5] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 397 - 399

[6] FISCHER R, IN PRESS

[7] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) : 206 - 213

[8] FISCHER RJ, 1985, J APPL PHYS, V45, P374

[9] POLAR HETEROJUNCTION INTERFACES [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4402 - 4410

[10] STRUCTURAL AND ELECTRONIC PROPERTIES OF STEPPED SEMICONDUCTOR SURFACES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 389 - 396