SOME ASPECTS ON THE FORMATION OF STRIATIONS DURING CRYSTAL-GROWTH FROM THE MELT

被引：13

作者：

CARLBERG, T

机构：

[1] Royal Inst of Technology, Stockholm, Swed, Royal Inst of Technology, Stockholm, Swed

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 85卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(87)90201-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：32 / 39

页数：8

共 17 条

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[8] INFLUENCE OF GROWTH-CONDITIONS ON MELT INTERFACE TEMPERATURE OSCILLATIONS IN SILICON CZOCHRALSKI GROWTH [J].

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JOURNAL OF CRYSTAL GROWTH, 1983, 63 (02) :276-284

[9] IMPURITY DISTRIBUTION IN SINGLE CRYSTALS .3. IMPURITY HETEROGENEITIES IN SINGLE CRYSTALS ROTATED DURING PULLING FROM MELT [J].

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[10]

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