INFLUENCE OF GROWTH-CONDITIONS ON MELT INTERFACE TEMPERATURE OSCILLATIONS IN SILICON CZOCHRALSKI GROWTH

被引：24

作者：

KURODA, E

KOZUKA, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 63卷 / 02期

关键词：

D O I：

10.1016/0022-0248(83)90216-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：276 / 284

页数：9

共 16 条

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[10] TEMPERATURE OSCILLATION AT THE GROWTH INTERFACE IN SILICON-CRYSTALS [J].

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JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) :173-176

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