TEMPERATURE OSCILLATION AT THE GROWTH INTERFACE IN SILICON-CRYSTALS

被引：18

作者：

KURODA, E

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 61卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90294-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：173 / 176

页数：4

共 12 条

[1]

BRICE JC, 1973, GROWTH CRYSTALS LIQU, P133

[2] DISSOLUTION OF FUSED SILICA IN MOLTEN SILICON [J].

CHANEY, RE ;

VARKER, CJ .

JOURNAL OF CRYSTAL GROWTH, 1976, 33 (01) :188-190

[3] PRECIPITATION OF OXYGEN IN SILICON [J].

FREELAND, PE ;

JACKSON, KA ;

LOWE, CW ;

PATEL, JR .

APPLIED PHYSICS LETTERS, 1977, 30 (01) :31-33

[4] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].

GLASSBRENNER, CJ ;

SLACK, GA .

PHYSICAL REVIEW, 1964, 134 (4A) :1058-+

[5] HEAT-TREATMENT BEHAVIOR OF MICRODEFECTS AND RESIDUAL IMPURITIES IN CZ SILICON-CRYSTALS [J].

KISHINO, S ;

KANAMORI, M ;

YOSHIHIRO, N ;

TAJIMA, M ;

IIZUKA, T .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) :8240-8243

[6]

KURODA E, UNPUB

[7] IDENTIFICATION, ANNIHILATION, AND SUPPRESSION OF NUCLEATION SITES RESPONSIBLE FOR SILICON EPITAXIAL STACKING-FAULTS [J].

ROZGONYI, GA ;

DEYSHER, RP ;

PEARCE, CW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) :1910-1915

[8]

SHASHKOV YM, 1966, SOV PHYS-SOLID STATE, V8, P467

[9]

SHIRAI S, 1980, APPL PHYS LETT, V32, P156

[10]

SUZUKI T, 1981, 4TH ECS M, P80

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