SILICON DIOXIDE AND CHALCOGENIDE SEMICONDUCTORS - SIMILARITIES AND DIFFERENCES

被引：131

作者：

MOTT, NF ^{[1
]}

机构：

[1] UNIV CAMBRIDGE, CAVENDISH LAB, CAMBRIDGE CB3 0HE, ENGLAND

来源：

关键词：

D O I：

10.1080/00018737700101413

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：363 / 391

页数：29

共 144 条

[81] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS
MOTT, NF
DAVIS, EA
STREET, RA
[J]. PHILOSOPHICAL MAGAZINE, 1975, 32 (05) : 961 - 996
[82] MOTT NF, 1976, COMMUN PHYS, V1, P203
[83] LIFETIME OF ELECTRONS, HOLES AND EXCITONS BEFORE SELF-TRAPPING
MOTT, NF
STONEHAM, AM
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (17): : 3391 - 3398
[84] INCREASE IN CONDUCTIVITY OF CHALCOGENIDE GLASSES BY ADDITION OF CERTAIN IMPURITIES
MOTT, NF
[J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (06): : 1101 - 1108
[85] PHOTOGENERATION OF CHARGE-CARRIERS AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS
MOTT, NF
[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (02): : 413 - 420
[86] STATES IN GAP IN CHALCOGENIDE GLASSES
MOTT, NF
STREET, RA
[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (01): : 33 - 52
[87] MOTT NF, 1938, P R SOC A, V167, P348
[88] MOTT NF, 1976, INT C PHYS SEMICOND, P1
[89] MOTT NF, 1977, STRUCTURE NONCRYSTAL, P101
[90] Mott NF, 1973, ELECTRONIC STRUCTURA, P1