HIGHLY NON-LINEAR INTERACTIONS IN N-TYPE INSB WITH A PICOSECOND CO2-LASER

被引：7

作者：

KWOK, HS ^{[1
]}

机构：

[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 02期

关键词：

D O I：

10.1109/JQE.1982.1071499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：283 / 289

页数：7

共 36 条

[1] REFLECTION AND TRANSMISSION OF LIGHT THROUGH TRANSPARENT MATERIALS AT HIGH-POWER DENSITIES [J].

ARAD, B ;

ELIEZER, S .

PHYSICAL REVIEW A, 1978, 18 (05) :2261-2265

[2]

BERTOLOTTI M, 1967, J APPL PHYS, V39, P4088

[3] SEMICONDUCTOR SURFACE DAMAGE PRODUCED BY RUBY LASERS [J].

BIRNBAUM, M .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) :3688-&

[4] REFLECTIVITY OF PICOSECOND NEODYMIUM LASER-PULSES IN GERMANIUM [J].

BOSACCHI, B ;

LEUNG, CY ;

SCULLY, MO .

OPTICS COMMUNICATIONS, 1978, 27 (03) :475-479

[5] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].

BURSTEIN, E .

PHYSICAL REVIEW, 1954, 93 (03) :632-633

[6] NON-LINEAR ABSORPTION AND PULSE SHAPING IN INSB [J].

DEMPSEY, J ;

SMITH, J ;

HOLAH, GD ;

MILLER, A .

OPTICS COMMUNICATIONS, 1978, 26 (02) :265-268

[7] 2-PHOTON EXCITATION RATE IN INDIUM-ANTIMONIDE [J].

FOSSUM, HJ ;

CHANG, DB .

PHYSICAL REVIEW B, 1973, 8 (06) :2842-2849

[8]

FOSSUM HJ, 1973, PHYS REV B, V8, P2850

[9] CONFIRMATION OF AN ELECTRON AVALANCHE CAUSING LASER-INDUCED BULK DAMAGE AT 1.06 MU-M [J].

FRADIN, DW ;

YABLONOVITCH, E ;

BASS, M .

APPLIED OPTICS, 1973, 12 (04) :700-709

[10] 2-PHOTON ABSORPTION IN INDIUM-ANTIMONIDE AND GERMANIUM [J].

GIBSON, AF ;

HATCH, CB ;

MAGGS, PND ;

TILLEY, DR ;

WALKER, AC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (17) :3259-3275

← 1 2 3 4 →