ACTIVATIONLESS HOPPING OF CORRELATED ELECTRONS IN N-TYPE GAAS

被引：24

作者：

TREMBLAY, F ^{[1
]}

PEPPER, M ^{[1
]}

NEWBURY, R ^{[1
]}

RITCHIE, D ^{[1
]}

PEACOCK, DC ^{[1
]}

FROST, JEF ^{[1
]}

JONES, GAC ^{[1
]}

HILL, G ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.40.3387

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3387 / 3389

页数：3

共 8 条

[1]

ALESHIN AN, 1987, SOV PHYS SEMICOND+, V21, P289

[2]

DVURECHENSKII AV, 1988, JETP LETT+, V48, P155

[3] COULOMB GAP AND LOW-TEMPERATURE CONDUCTIVITY OF DISORDERED SYSTEMS [J].

EFROS, AL ;

SHKLOVSKII, BI .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (04) :L49-L51

[4]

Mott N. F., 1968, Journal of Non-Crystalline Solids, V1, P1, DOI 10.1016/0022-3093(68)90002-1

[5]

RENTZSCH R, 1979, PHYS STATUS SOLIDI A, V54, P487, DOI 10.1002/pssa.2210540207

[6]

SHKLOVSKII BI, 1972, FIZ TEKH POLUPROV, V6, P2335

[7] ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS [J].

STILLMAN, GE ;

WOLFE, CM .

THIN SOLID FILMS, 1976, 31 (1-2) :69-88

[8] NEGATIVE MAGNETORESISTANCE IN THE VARIABLE-RANGE-HOPPING REGIME IN N-TYPE GAAS [J].

TREMBLAY, F ;

PEPPER, M ;

RITCHIE, D ;

PEACOCK, DC ;

FROST, JEF ;

JONES, GAC .

PHYSICAL REVIEW B, 1989, 39 (11) :8059-8061

← 1 →