NEW SILICON EPITAXIAL AVALANCHE-DIODE FOR SINGLE-PHOTON TIMING AT ROOM-TEMPERATURE

被引：43

作者：

GHIONI, M ^{[1
]}

COVA, S ^{[1
]}

LACAITA, A ^{[1
]}

RIPAMONTI, G ^{[1
]}

机构：

[1] POLITECN MILAN,CTR ELETTR,I-20133 MILAN,ITALY

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 24期

关键词：

D O I：

10.1049/el:19881007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1476 / 1477

页数：2

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