ELECTRICAL CHARACTERIZATION OF UNDOPED AND BORON-DOPED POLYCRYSTALLINE DIAMOND THIN-FILMS

被引：38

作者：

RAMESHAM, R ^{[1
]}

ROPPEL, T ^{[1
]}

ELLIS, C ^{[1
]}

LOO, BH ^{[1
]}

机构：

[1] UNIV ALABAMA,DEPT CHEM,HUNTSVILLE,AL 35899

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 10期

关键词：

D O I：

10.1149/1.2085352

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Undoped and boron-doped polycrystalline diamond thin films have been grown on silicon substrates using microwave plasma-assisted chemical vapor deposition. Current voltage characteristics of diamond thin films have been measured as a function of annealing in nitrogen gas and hydrogen microwave plasma treatments. Scanning electron microscopy and Raman spectroscopy are used to analyze the nature of films before and after the treatments.

引用

页码：2981 / 2984

页数：4

共 13 条

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