DEPLETION LAYER CALCULATIONS FOR ERROR FUNCTION DIFFUSED JUNCTIONS

Expressions are derived for the voltage dependance of the depletion layer width, the maximum electric field and the capacitance of error function diffused plane cylindrical and spherical p-n junctions. These are also shown in graphical form for junctions in silicon for ratios of surface to background concentration covering the range 102-107. It is shown that the junctions can be considered to be either linearly graded or abrupt with a transition range covering about 2 decades of voltage. The results obtained are very similar to those for gaussian diffused junctions. © 1969.