PLASMA-ETCHING CHARACTERISTICS OF SPUTTERED MOSI2 FILMS

被引:20
作者
CHOW, TP [1 ]
STECKL, AJ [1 ]
机构
[1] RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
关键词
D O I
10.1063/1.91967
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:466 / 468
页数:3
相关论文
共 7 条
[1]   SIZE EFFECTS IN MOSI2-GATE MOSFETS [J].
CHOW, TP ;
STECKL, AJ .
APPLIED PHYSICS LETTERS, 1980, 36 (04) :297-299
[2]   1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].
CROWDER, BL ;
ZIRINSKY, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :369-371
[3]  
KIRK RW, 1974, TECHNIQUES APPLICATI, pCH9
[4]  
Melliar-Smith C. M., 1978, THIN FILM PROCESSES
[5]   PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J].
MOGAB, CJ ;
ADAMS, AC ;
FLAMM, DL .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3796-3803
[6]  
REINBERG A, 1976, P S ETCH, P91
[7]   PLASMA ETCHING - PSEUDO-BLACK-BOX APPROACH [J].
WINTERS, HF ;
COBURN, JW ;
KAY, E .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) :4973-4983