PLASMA ETCHING - PSEUDO-BLACK-BOX APPROACH

[1] ABE H, 1975, J JAPAN SOC APPL P S, V44, P287

[2] MOLECULAR ELECTRON IONIZATION CROSS SECTIONS AT 70-EV [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1969, 73 (11) : 3866 - &

[3] DRY PROCESS TECHNOLOGY (REACTIVE ION ETCHING) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05): : 1023 - 1029

[4] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[5] A SYSTEM FOR DETERMINING MASS ENERGY OF PARTICLES INCIDENT ON A SUBSTRATE IN A PLANAR DIODE SPUTTERING SYSTEM [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1970, 41 (08) : 1219 - &

[6] PHOTOIONIZATION AND ABSORPTION CROSS SECTIONS AND FLUORESCENCE OF CF4 [J]. JOURNAL OF CHEMICAL PHYSICS, 1965, 43 (05) : 1794 - &

[7] FIELD FH, 1974, ELECTRON IMPACT PHEN, P387

[8] STUDY OF OPTICAL EMISSION FROM AN RF PLASMA DURING SEMICONDUCTOR ETCHING [J]. APPLIED SPECTROSCOPY, 1977, 31 (03) : 201 - 207

[9] HARSHBARGER WR, 1973, J ELECTRON SPECTROSC, V1, P319

[10] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[1] ABE H, 1975, J JAPAN SOC APPL P S, V44, P287

[2] MOLECULAR ELECTRON IONIZATION CROSS SECTIONS AT 70-EV [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1969, 73 (11) : 3866 - &

[3] DRY PROCESS TECHNOLOGY (REACTIVE ION ETCHING) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05): : 1023 - 1029

[4] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[5] A SYSTEM FOR DETERMINING MASS ENERGY OF PARTICLES INCIDENT ON A SUBSTRATE IN A PLANAR DIODE SPUTTERING SYSTEM [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1970, 41 (08) : 1219 - &

[6] PHOTOIONIZATION AND ABSORPTION CROSS SECTIONS AND FLUORESCENCE OF CF4 [J]. JOURNAL OF CHEMICAL PHYSICS, 1965, 43 (05) : 1794 - &

[7] FIELD FH, 1974, ELECTRON IMPACT PHEN, P387

[8] STUDY OF OPTICAL EMISSION FROM AN RF PLASMA DURING SEMICONDUCTOR ETCHING [J]. APPLIED SPECTROSCOPY, 1977, 31 (03) : 201 - 207

[9] HARSHBARGER WR, 1973, J ELECTRON SPECTROSC, V1, P319

[10] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147