SELF-ALIGNED INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH A BURIED SUBCOLLECTOR GROWN BY SELECTIVE EPITAXY

被引：12

作者：

SONG, JI

FREI, MR

HAYES, JR

BHAT, R

COX, HM

机构：

[1] Bellcore, Red Bank

[2] AT&T Bell Laboratories

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 04期

关键词：

Characterization - Epitaxial growth - Etching - Heterojunctions - Masks - Microwave measurement - Optimization - Semiconducting indium compounds - Semiconductor device manufacture - Semiconductor device structures - Semiconductor doping - Semiconductor growth;

D O I：

10.1109/55.285409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first microwave characterization of an In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistor (HBT) with a buried InGaAs subcollector grown by selective epitaxy. The study compares two HBT's having identical 2 x 10 mum2 self-aligned emitter fingers but different subcollectors. Improvement in microwave performance of the selectively-grown HBT over the conventional HBT was observed due to the reduced parasitic base-collector capacitance achieved by incorporating the selectively-grown buried subcollector.

引用

页码：123 / 125

页数：3