RAMAN-SCATTERING INVOLVING UMKLAPP PROCESSES IN SI/GEXSI1-X SUPERLATTICES

被引：21

作者：

DHARMAWARDANA, MWC

LOCKWOOD, DJ

BARIBEAU, JM

HOUGHTON, DC

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.34.3034

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3034 / 3036

页数：3

共 5 条

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[2] RAMAN-SCATTERING IN SUPER-LATTICES - ANISOTROPY OF POLAR PHONONS [J].

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CHO, AY ;

GOSSARD, AC .

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[3] SEMICONDUCTOR PROPERTIES BASED UPON UNIVERSAL TIGHT-BINDING PARAMETERS [J].

REN, SY ;

HARRISON, WA .

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[4]

Rytov S., 1956, SOV PHYS ACOUST, V2, P68

[5] RESONANCE ENHANCED UMKLAPP RAMAN PROCESSES IN GAAS-GA1-XALXAS SUPER-LATTICES [J].

SAIHALASZ, GA ;

PINCZUK, A ;

YU, PY ;

ESAKI, L .

SOLID STATE COMMUNICATIONS, 1978, 25 (06) :381-384

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