共 12 条
- [11] RUBENSTEIN M, 1962, J ELECTROCHEM SOC, V109, pC69
- [12] Tiller W.A., 1968, J CRYST GROWTH, V2, P69, DOI 10.1016/0022-0248(68)90045-6
SYNTHESIS OF BULK GAP FROM GA SOLUTIONS
被引：2
作者：
PLASKETT, TS
机构：
关键词：
D O I：
10.1149/1.2411683
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The synthesis of solid ingots of high-purity GaP by reacting phosphine with molten Ga at 1000 to 1200 C is described. Actual growth parameters were measured during synthesis and compared with the values predicted from solution growth theory. Growth rates of about 1. 7/10//5 cm/sec were possible with this system for a solution saturated with P at 12pp C. Some properties of the synthesized material are presented.
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页码：1722 / &
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