BOUND-EXCITON LUMINESCENCE ASSOCIATED WITH COBALT ACCEPTORS IN VAPOR-GROWN GAAS

被引：16

作者：

OZEKI, M

SHIBATOMI, A

OHKAWA, S

机构：

[1] Fujitsu Laboratories Ltd., Kawasaki

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 07期

关键词：

D O I：

10.1063/1.326545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new emission line due to a recombination of an exciton bound to a cobalt acceptor has been observed at 1.489 eV in vapor-grown GaAs. Detailed Zeeman analysis of the emission revealed that the corresponding center has a tetrahedral symmetry in the crystal. Relevant splitting factors are g e=-0.47(electron), K=0.61(hole), and L=-0.05(hole).

引用

页码：4823 / 4827

页数：5

共 14 条

[1]

ANDRIANOV DG, 1978, SOV PHYS SEMICOND, V11, P858

[2] OPTICAL PROPERTIES OF GAAS-CO [J].

BARANOWSKI, JM ;

MAGERRAMOV, EM ;

GRYNBERG, M .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 50 (02) :433-+

[3]

Bimberg D., 1970, Journal of Luminescence, V3, P175, DOI 10.1016/0022-2313(71)90055-X

[4] POTENTIAL-DEPENDENT ELECTRON AND HOLE G-VALUES AND QUENCHED DIAMAGNETISM IN GAP .1. EXPERIMENTAL RESULTS AND PROPERTIES OF DONOR STATES [J].

DEAN, PJ ;

BIMBERG, D ;

MANSFIELD, F .

PHYSICAL REVIEW B, 1977, 15 (08) :3906-3916

[5]

GROSS EF, 1967, SOV PHYS SEMICOND+, V1, P241

[6]

HAISTY RW, 1964, 7TH P INT C PHYS SEM, P1161

[7]

KORMILOV BV, 1974, SOV PHYS SEMICOND, V8, P141

[8] SHALLOW DONOR LEVELS OF INSB IN A MAGNETIC FIELD [J].

LARSEN, DM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (02) :271-&

[9] VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS [J].

LAWAETZ, P .

PHYSICAL REVIEW B, 1971, 4 (10) :3460-&

[10]

MORGAN TN, 1974, 12TH P INT C PHYS SE, P391

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