OPTICAL PROPERTIES OF GAAS-CO

[1] PHOTO-IONIZATION OF DEEP IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (06): : 1077 - &

[2] BARANOWSKI JM, 1967, PHYS REV, V160, P726

[3] Boyn R., 1970, Physica Status Solidi, V42, pK197, DOI 10.1002/pssb.19700420271

[4] DEXTER DL, 1958, SOLID STATE PHYS, V6, P353

[5] THERMAL IONIZATION ENERGIES OF CD AND ZN IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4856 - +

[6] HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 1963 - &

[7] HAISTY RW, 1964, PHYSICS SEMICONDUCTO, P1161

[8] OPTICAL PROPERTIES OF TRANSITION OF METAL IMPURITIES IN CDSE .1. CRYSTAL-FIELD SPECTRA [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 44 (01): : 155 - +

[9] LOESCHER DH, 1966, J PHYS SOC JPN, VS 21, P239

[10] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302

[1] PHOTO-IONIZATION OF DEEP IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (06): : 1077 - &

[2] BARANOWSKI JM, 1967, PHYS REV, V160, P726

[3] Boyn R., 1970, Physica Status Solidi, V42, pK197, DOI 10.1002/pssb.19700420271

[4] DEXTER DL, 1958, SOLID STATE PHYS, V6, P353

[5] THERMAL IONIZATION ENERGIES OF CD AND ZN IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4856 - +

[6] HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 1963 - &

[7] HAISTY RW, 1964, PHYSICS SEMICONDUCTO, P1161

[8] OPTICAL PROPERTIES OF TRANSITION OF METAL IMPURITIES IN CDSE .1. CRYSTAL-FIELD SPECTRA [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1971, 44 (01): : 155 - +

[9] LOESCHER DH, 1966, J PHYS SOC JPN, VS 21, P239

[10] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302