共 76 条
- [2] SURFACE-STRUCTURE AND INTERFACE FORMATION OF SI ON GAAS(100) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1135 - 1140
- [4] BARONI S, 1988, 19TH P INT C PHYS SE, P525
- [5] BARONI S, 1989, SPECTROSCOPY SEMICON
- [7] ALAS-GAAS HETEROJUNCTION ENGINEERING BY MEANS OF GROUP-IV ELEMENTAL INTERFACE LAYERS [J]. PHYSICAL REVIEW B, 1992, 45 (08): : 4528 - 4531
- [8] EPITAXIAL-GROWTH AND INTERFACE PARAMETERS OF SI LAYERS ON GAAS(001) AND ALAS(001) SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 2225 - 2232
- [9] HUGE ELECTRIC-FIELDS IN GE/GAAS (001) AND (111) SUPERLATTICES AND THEIR EFFECT ON INTERFACIAL STABILITY [J]. PHYSICAL REVIEW B, 1990, 41 (06): : 3509 - 3512