STRUCTURE AND LOCAL DIPOLE OF SI INTERFACE LAYERS IN ALAS-GAAS HETEROSTRUCTURES

被引:60
作者
SORBA, L
BRATINA, G
ANTONINI, A
FRANCIOSI, A
TAPFER, L
MIGLIORI, A
MERLI, P
机构
[1] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455
[2] CTR NAZL RIC & SVILUPPO MAT,I-72023 MESAGNE,ITALY
[3] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
[4] CNR,IST CHIM & TECNOL MAT & COMPONENTI ELETTRON,I-40126 BOLOGNA,ITALY
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 11期
关键词
D O I
10.1103/PhysRevB.46.6834
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
AlAs-Si-GaAs(001) and GaAs-Si-AlAs(001) heterostructures were synthesized by molecular-beam epitaxy. Transmission electron microscopy and in situ x-ray photoemission spectroscopy, together with x-ray interference measurements of model GaAs-Si-GaAs(001) structures and Si-GaAs(001) superlattices, indicate that pseudomorphic Si layers can be grown at the interface for layer thickness less-than-or-equal-to 4-8 monolayers with no detectable dislocation or twin formation. While the band offsets for isovalent AlAs-GaAs heterostructures follow the commutativity rule, the presence of Si at the interface is found to give rise to deviations from the rule as large as +/- 0.4 eV. Such deviations are associated with a Si-induced local dipole that can be established with high reproducibility within the interface region.
引用
收藏
页码:6834 / 6845
页数:12
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