HUGE ELECTRIC-FIELDS IN GE/GAAS (001) AND (111) SUPERLATTICES AND THEIR EFFECT ON INTERFACIAL STABILITY

被引:40
作者
BYLANDER, DM
KLEINMAN, L
机构
[1] Department of Physics, University of Texas, Austin
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 06期
关键词
D O I
10.1103/PhysRevB.41.3509
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Self-consistent relativistic pseudopotential calculations of Ge6/(GaAs)3 (001) and (111) superlattices yield a sawtooth potential resulting in electric fields of magnitude 109 V/m. This has little effect on the (111) energy bands but localized states on the two (001) interfaces are shifted in opposite directions, resulting in a negative energy gap. Formation-enthalpy calculations indicate the (111) interface is probably stable against reconstruction while the (001) interface is probably unstable. © 1990 The American Physical Society.
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页码:3509 / 3512
页数:4
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