COMPARISON OF DIPOLE LAYERS, BAND OFFSETS, AND FORMATION ENTHALPIES OF GAAS-ALAS (110) AND (001) INTERFACES

被引：58

作者：

BYLANDER, DM

KLEINMAN, L

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.59.2091

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2091 / 2094

页数：4

共 10 条

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[10] THERMODYNAMIC INSTABILITY OF ULTRATHIN SEMICONDUCTOR SUPERLATTICES - THE (001) (GAAS)1(ALAS)1 STRUCTURE
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