EFFECTIVE ELECTRON-DENSITY VARIATION AND ATOMIC CONFIGURATION OF AL IN ALXGA1-XAS

被引：11

作者：

AKIMOTO, K

MORI, Y

KOJIMA, C

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.35.3799

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3799 / 3803

页数：5

共 33 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
ADACHI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
[2] PHOTOLUMINESCENCE KILLER CENTER IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY
AKIMOTO, K
KAMADA, M
TAIRA, K
ARAI, M
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2833 - 2836
[3] AKIMOTO K, UNPUB
[4] [Anonymous], 1978, HETEROSTRUCTURE LASE
[5] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS
CHAND, N
HENDERSON, T
KLEM, J
MASSELINK, WT
FISCHER, R
CHANG, YC
MORKOC, H
[J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4481 - 4492
[6] THE ELECTRONIC STRUCTURE OF CONJUGATED SYSTEMS .5. THE INTERACTION OF 2 CONJUGATED SYSTEMS
COULSON, CA
LONGUETHIGGINS, HC
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1948, 195 (1041): : 188 - 197
[7] COULSON CA, 1947, P ROYAL SOC LONDON A, V191, P16
[8] COULSON CA, 1947, P ROY SOC A, V193, P456
[9] COULSON CA, 1947, P ROY SOC LOND A MAT, V193, P447
[10] DINGLE R, 1977, 6TH P INT S GAAS REL, V33, P210