EXPERIMENTAL INFLUENCE OF SOME GROWTH PARAMETERS UPON SHAPE OF MELT INTERFACES AND RADIAL PHOSPHORUS DISTRIBUTION DURING FLOAT-ZONE GROWTH OF SILICON SINGLE-CRYSTALS

被引：21

作者：

KELLER, W ^{[1
]}

机构：

[1] SIEMENS AG,MUNCHEN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 36卷 / 02期

关键词：

D O I：

10.1016/0022-0248(76)90281-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：215 / 231

页数：17

共 18 条

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GRASSO, M .

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CARRUTHERS JR, 1975, 10 AIAA THERM C DENV

[9] INHOMOGENEITIES DUE TO THERMOCAPILLARY FLOW IN FLOATING ZONE-MELTING [J].

CHANG, CE ;

WILCOX, WR .

JOURNAL OF CRYSTAL GROWTH, 1975, 28 (01) :8-12

[10]

Ciszek T. F., 1969, Semiconductor silicon, P156

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