THE SHAPE OF MELT-CRYSTAL INTERFACES DURING FLOAT ZONING OF SILICON

[1] AKIYAMA K, COMMUNICATION

[2] SINGLE CRYSTALS OF EXCEPTIONAL PERFECTION AND UNIFORMITY BY ZONE LEVELING [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 637 - 660

[3] SOME DEFECTS IN CRYSTALS GROWN FROM THE MELT .1. DEFECTS CAUSED BY THERMAL STRESSES [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 235 (1200) : 37 - +

[4] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1193 - 1195

[5] DORENDORF H, 1957, Z ANGEW PHYS, V9, P513

[6] LIQUID-SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD [J]. CANADIAN JOURNAL OF PHYSICS, 1960, 38 (03) : 439 - 443

[7] FULLER CS, 1956, J APPL PHYS, V27, P550

[8] HANNAY NB, 1958, TRANSISTOR TECHNOLOG, V2, P9

[9] INFRARED STUDIES OF BIREFRINGENCE IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) : 1631 - 1638

[10] LYON DW, RARE METALS HDB, P383

[1] AKIYAMA K, COMMUNICATION

[2] SINGLE CRYSTALS OF EXCEPTIONAL PERFECTION AND UNIFORMITY BY ZONE LEVELING [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 637 - 660

[3] SOME DEFECTS IN CRYSTALS GROWN FROM THE MELT .1. DEFECTS CAUSED BY THERMAL STRESSES [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 235 (1200) : 37 - +

[4] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1193 - 1195

[5] DORENDORF H, 1957, Z ANGEW PHYS, V9, P513

[6] LIQUID-SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD [J]. CANADIAN JOURNAL OF PHYSICS, 1960, 38 (03) : 439 - 443

[7] FULLER CS, 1956, J APPL PHYS, V27, P550

[8] HANNAY NB, 1958, TRANSISTOR TECHNOLOG, V2, P9

[9] INFRARED STUDIES OF BIREFRINGENCE IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) : 1631 - 1638

[10] LYON DW, RARE METALS HDB, P383