HOT-ELECTRON LUMINESCENCE AND POLARIZATION IN GAAS1-XPX ALLOYS

被引：6

作者：

CHARFI, FF ^{[1
]}

ZOUAGHI, M ^{[1
]}

PLANEL, R ^{[1
]}

ALAGUILLAUME, CB ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.33.5623

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5623 / 5632

页数：10

共 33 条

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[4]

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[6] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].

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GROVES, WO .

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[7]

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[8]

DYAKONOV MI, 1971, SOV PHYS JETP-USSR, V33, P1053

[9]

Dymnikov V. D., 1978, Soviet Physics - Solid State, V20, P1250

[10]

DYMNIKOV VD, 1977, SOV PHYS SEMICOND+, V11, P868

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