AN ANALYTICAL MODEL FOR THE INVERSE NARROW-GATE EFFECT OF A METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

被引：9

作者：

HONG, KM

CHENG, YC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.337954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2387 / 2392

页数：6

共 9 条

[1] AN ANALYTICAL MODEL FOR THE THRESHOLD VOLTAGE OF A NARROW-WIDTH MOSFET [J].

CHENG, YC ;

LAI, PT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) :1814-1823

[2]

JI CR, 1983, IEEE T ELECTRON DEV, V30, P635

[3] COMPARISON OF THRESHOLD MODULATION IN NARROW MOSFETS WITH DIFFERENT ISOLATION STRUCTURES [J].

LAL, PT ;

CHENG, YC .

SOLID-STATE ELECTRONICS, 1985, 28 (06) :551-554

[4] 3-DIMENSIONAL SIMULATION OF INVERSE NARROW-CHANNEL EFFECT [J].

SHIGYO, N ;

KONAKA, M ;

DANG, RLM .

ELECTRONICS LETTERS, 1982, 18 (06) :274-275

[5]

SNEDDON IN, 1972, USE INTEGRAL TRANSFO, pCH2

[6] OPTIMUM P-CHANNEL ISOLATION STRUCTURE FOR CMOS [J].

SUGINO, M ;

AKERS, LA ;

FORD, JM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) :1823-1829

[7] SIMPLE THEORY FOR THRESHOLD VOLTAGE MODULATION IN SHORT-CHANNEL MOS-TRANSISTORS [J].

VARSHNEY, RC .

ELECTRONICS LETTERS, 1973, 9 (25) :600-602

[8] AN ANALYTIC AND ACCURATE MODEL FOR THE THRESHOLD VOLTAGE OF SHORT CHANNEL MOSFETS IN VLSI [J].

WU, CY ;

YANG, SY ;

CHEN, HH ;

TSENG, FC ;

SHIH, CT .

SOLID-STATE ELECTRONICS, 1984, 27 (07) :651-658

[9]

YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2

← 1 →