COMPARISON OF THRESHOLD MODULATION IN NARROW MOSFETS WITH DIFFERENT ISOLATION STRUCTURES

被引：6

作者：

LAL, PT

CHENG, YC

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(85)90124-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：551 / 554

页数：4

共 8 条

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KONAKA, M ;

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[7] SUBTHRESHOLD CURRENT IN OXIDE ISOLATED STRUCTURES [J].

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[8]

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