SUBTHRESHOLD CURRENT IN OXIDE ISOLATED STRUCTURES

被引:13
作者
SUGINO, M [1 ]
AKERS, LA [1 ]
机构
[1] ARIZONA STATE UNIV,DEPT ELECT ENGN,TEMPE,AZ 85287
关键词
D O I
10.1109/EDL.1983.25668
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:114 / 115
页数:2
相关论文
共 8 条
[1]   A MODEL OF A NARROW-WIDTH MOSFET INCLUDING TAPERED OXIDE AND DOPING ENCROACHMENT [J].
AKERS, LA ;
BEGUWALA, MME ;
CUSTODE, FZ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (12) :1490-1495
[2]   THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW [J].
AKERS, LA ;
SANCHEZ, JJ .
SOLID-STATE ELECTRONICS, 1982, 25 (07) :621-641
[3]  
LEE HG, 1982, IEEE T ELECTRON DEV, V29, P346, DOI 10.1109/T-ED.1982.20707
[4]   3-DIMENSIONAL SIMULATION OF INVERSE NARROW-CHANNEL EFFECT [J].
SHIGYO, N ;
KONAKA, M ;
DANG, RLM .
ELECTRONICS LETTERS, 1982, 18 (06) :274-275
[5]  
Sze S M, 1981, PHYSICS SEMICONDUCTO, P446
[6]   SUB-THRESHOLD CONDUCTION IN MOSFETS [J].
TAYLOR, GW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) :337-350
[7]  
Wada M., 1981, International Electron Devices Meeting, P223
[8]  
YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2