STABILITY AND INTERDIFFUSION AT MOCVD GROWN ZNSE/GAAS INTERFACES

被引：8

作者：

OHMI, K ^{[1
]}

SUEMUNE, I ^{[1
]}

KANDA, T ^{[1
]}

KAN, Y ^{[1
]}

YAMANISHI, M ^{[1
]}

NISHIYAMA, F ^{[1
]}

HASAI, H ^{[1
]}

机构：

[1] HIROSHIMA UNIV,FAC ENGN,DEPT APPL SCI,HIROSHIMA 724,JAPAN

来源：

关键词：

D O I：

10.1016/0022-0248(90)90760-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：467 / 470

页数：4

共 6 条

[1] Chu W. K., 1978, BACKSCATTERING SPECT
[2] KAMATA A, 1985, 17TH C SOL STAT DEV, P233
[3] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2
[4] COHERENT GROWTH OF ZNSE ON GAAS BY MOCVD
MITSUHASHI, H
MITSUISHI, I
MIZUTA, M
KUKIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L578 - L580
[5] OHMI K, UNPUB
[6] CONTROL OF ZNSE FILM STOICHIOMETRY AT ZNSE GAAS INTERFACE GROWN BY MOCVD
SUEMUNE, I
OHMI, K
KANDA, T
YUKUTAKE, K
KAN, Y
YAMANISHI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (10): : L827 - L829