ANGLE-RESOLVED INVERSE PHOTOELECTRON-SPECTROSCOPY STUDIES OF CDTE(110), CDS(112BAR0), AND CDSE(112BAR0)

被引:30
作者
MAGNUSSON, KO [1 ]
KARLSSON, UO [1 ]
STRAUB, D [1 ]
FLODSTROM, SA [1 ]
HIMPSEL, FJ [1 ]
机构
[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
关键词
D O I
10.1103/PhysRevB.36.6566
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:6566 / 6573
页数:8
相关论文
共 42 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]   EMPTY SEMICONDUCTOR SURFACE-STATES - CORE-LEVEL PHOTO-YIELD STUDIES [J].
BAUER, RS ;
BACHRACH, RZ ;
FLODSTROM, SA ;
MCMENAMIN, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :378-382
[3]   ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF HEXAGONAL CDSE CDS AND ZNS [J].
BERGSTRESSER, TK ;
COHEN, ML .
PHYSICAL REVIEW, 1967, 164 (03) :1069-+
[4]   ELECTRONIC-STRUCTURE OF NONPOLAR SURFACES OF 2-6 COMPOUNDS [J].
CALANDRA, C ;
SANTORO, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :773-778
[5]   OPTICAL PROPERTIES AND BAND STRUCTURE OF WURTZITE-TYPE CRYSTALS AND RUTILE [J].
CARDONA, M ;
HARBEKE, G .
PHYSICAL REVIEW, 1965, 137 (5A) :1467-+
[6]   FUNDAMENTAL REFLECTIVITY AND BAND STRUCTURE OFZNTE,CDTE, AND HGTE [J].
CARDONA, M ;
GREENAWAY, DL .
PHYSICAL REVIEW, 1963, 131 (01) :98-+
[7]   REFLECTIVITIES AND ELECTRONIC BAND STRUCTURES OF CDTE AND HGTE [J].
CHADI, DJ ;
BALKANSK.M ;
WALTER, JP ;
PETROFF, Y ;
COHEN, ML .
PHYSICAL REVIEW B, 1972, 5 (08) :3058-&
[8]   ELECTRONIC BAND STRUCTURES FOR ZINCBLENDE AND WURTZITE CDS [J].
CHANG, KJ ;
FROYEN, S ;
COHEN, ML .
PHYSICAL REVIEW B, 1983, 28 (08) :4736-4743
[9]   LEED ANALYSIS OF PRINCIPAL NONPOLAR (1120) AND (1010) SURFACES OF CADMIUM-SULFIDE [J].
CHANG, SC ;
MARK, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (02) :624-628
[10]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582