SIMS AND DLTS MEASUREMENTS ON FE-DOPED INP EPITAXIAL LAYERS GROWN BY MOCVD

被引：12

作者：

TAKANOHASHI, T ^{[1
]}

NAKAI, K ^{[1
]}

NAKAJIMA, K ^{[1
]}

机构：

[1] FUJITSU LABS LTD,ATSUGI 24301,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 01期

关键词：

D O I：

10.1143/JJAP.27.L113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L113 / L115

页数：3

共 10 条

[1] PRECIPITATION IN FE-DOPED SEMI-INSULATING INP EPITAXIAL LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD) [J].

CHU, SNG ;

NAKAHARA, S ;

LONG, JA ;

RIGGS, VG ;

JOHNSTON, WD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2795-2798

[2] A STUDY OF FE-DOPANTS FOR GROWTH OF SEMIINSULATING INP BY MOCVD [J].

LONG, JA ;

RIGGS, VG ;

MACRANDER, AT ;

JOHNSTON, WD .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :42-46

[3] GROWTH OF FE-DOPED SEMI-INSULATING INP BY MOCVD [J].

LONG, JA ;

RIGGS, VG ;

JOHNSTON, WD .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) :10-14

[4] ELECTRICAL CHARACTERIZATION OF FE-DOPED SEMI-INSULATING INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

MACRANDER, AT ;

LONG, JA ;

RIGGS, VG ;

BLOEMEKE, AF ;

JOHNSTON, WD .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1297-1298

[5] A TRANSMISSION ELECTRON-MICROSCOPE STUDY OF IRON PHOSPHIDE PRECIPITATES IN INP CRYSTALS [J].

NAKAHARA, S ;

CHU, SNG ;

LONG, JA ;

RIGGS, VG ;

JOHNSTON, WD .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (03) :693-698

[6]

NAKAI K, 1987, IN PRESS 14TH P C GA

[7] DIFFUSION, SOLUBILITY, AND ELECTRICAL-ACTIVITY OF CO AND FE IN INP [J].

SHISHIYANU, FS ;

GHEORGHIU, VG ;

PALAZOV, SK .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 40 (01) :29-35

[8]

UEDA O, 1987, 34TH SPRING M JPN SO, P149

[9]

WAKAO K, 1987, FEB SEM LAS TUD5 1 A, P55

[10]

YAMAKOSHI S, 1986, 12TH C OPT COMM BARC

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