MORPHOLOGY OF ETCH PITS ON GERMANIUM STUDIED BY OPTICAL AND SCANNING ELECTRON MICROSCOPY

被引：3

作者：

EHMAN, MF

JINDAL, GR

FAUST, JW

WHITE, WB

机构：

来源：

关键词：

D O I：

10.1063/1.1659322

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2824 / &

共 13 条

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[2] DISLOCATIONS IN GERMANIUM
ELLIS, SG
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[3] EFFECT OF IONIC SPECIES ON ETCHING OF GERMANIUM
FAUST, JW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (01) : 114 - &
[4] FAUST JW, 1963, ELECTROCHEM TECH, V1, P377
[5] FAUST JW, 1964, ELECTROCHEM TECHNOL, V2, P339
[6] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON
FINNE, RM
KLEIN, DL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 965 - &
[7] Gatos H. C., 1960, SURFACE CHEM METALS, P151
[8] DISLOCATION ETCH PIT FORMATION IN LITHIUM FLUORIDE
GILMAN, JJ
JOHNSTON, WG
SEARS, GW
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (05) : 747 - 754
[9] HEIDENREICH RD, Patent No. 2619414
[10] HONESS AP, 1927, NATURE ORIGIN INTERP, P57