18.5 GHZ BANDWIDTH MONOLITHIC PREAMPLIFIER USING ALGAAS/GAAS BALLISTIC COLLECTION TRANSISTORS

被引：5

作者：

SANO, E

NAKAMURA, M

IMAI, Y

MATSUOKA, Y

ISHIBASHI, T

机构：

[1] NTT LSI Laboratories 3-1 Morinosato Wakamiya

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 22期

关键词：

AMPLIFIERS; CIRCUIT DESIGN;

D O I：

10.1049/el:19911296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A circuit technique for improving the transimpedance flatness and output matching characteristics in a preamplifier is proposed. An 18.5 GHz bandwidth monolithic preamplifier with a transimpedance of 52 dB-OMEGA has been fabricated with AlGaAs/GaAs ballistic collection transistors.

引用

页码：2093 / 2094

页数：2