THE IMPORTANCE OF THE NON-QUASI-STATIC BIPOLAR-TRANSISTOR MODEL FOR CIRCUIT APPLICATIONS

This paper addresses the need for the non-quasi-static bipolar device models from a practical viewpoint. Previous work focused on improvement of the non-quasi-static models for a single device. This paper shows the importance of the non-quasi-static models in small-signal circuit applications. The circuit example chosen is lateral p-n-p transistors used as series pass transistors in a series voltage regulator. For the series voltage regulator, the non-quasi-static inductance (L) model correctly predicts the rapid falloff of the magnitude of the current gain and thus reduces the required internal compensation and subsequent circuit area.