INTERPRETATION OF DOPING PHENOMENA IN HIGH-TC SUPERCONDUCTORS

被引：3

作者：

CHANDRAN, L

JANSEN, L

机构：

[1] Physics Department, ETH-Hönggerberg, Zürich

来源：

BULLETIN OF MATERIALS SCIENCE | 1991年 / 14卷 / 04期

关键词：

DOPING PHENOMENA; INDIRECT-EXCHANGE PHENOMENA;

D O I：

10.1007/BF02747468

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

On the basis of an indirect-exchange pairing mechanism of superconductivity we present a consistent interpretation of doping phenomena in both hole-doped as well as electron-doped high-T(c) superconductors. We argue that in all these materials the unifying feature is the existence of a correlated narrow band of electron states formed due to doping. Numerous experimental evidences for the occurrence of such a band (reflectivity, thermoelectric power, electrical resistivity, X-ray absorption, point-contact tunneling etc.) now exist. Assuming the existence of such a band it was earlier shown that the indirect-exchange (superexchange) coupling between electrons in this band via closed-shell oxygen anions is attractive in the s-wave channel and leads to high-T(c) superconductivity. Within the framework of this pairing mechanism, recent doping experiments (for both types of doping) can be given a unified interpretation. In addition, definitive predictions of the doping conditions under which critical temperatures are expected to enhance, are made.

引用

页码：1007 / 1013

页数：7

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