DETECTION OF DISCONTINUITIES IN PASSIVATING LAYERS ON SILICON BY NAOH ANISOTROPIC ETCH

被引：21

作者：

PUGACZMU.IJ

机构：

来源：

关键词：

D O I：

10.1147/rd.165.0523

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：523 / &

共 9 条

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