CORRELATIONS BETWEEN THE THERMOELECTRIC-POWER AND HALL-EFFECT OF SN OR GE DOPED IN2O3 SEMICONDUCTORS

被引：9

作者：

CAMPET, G

HAN, SD

WEN, SJ

SHASTRY, MCR

CHAMINADE, B

MARQUESTAUT, E

PORTIER, J

DORDOR, P

机构：

[1] Laboratoire de Chimie du Solide, CNRS, Université de Bordeaux I, 33405 Talence cedex

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 22卷 / 2-3期

关键词：

D O I：

10.1016/0921-5107(94)90256-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermoelectric power and Hall effect of Sn or Ge doped In2O3 semiconductors were investigated based on a comparative study. Metal-type conductivity occurs in both samples when the carrier concentration exceeds approximately 10(19) cm(-3). The carrier mobility is found to be higher for Ge doped samples. The relation between the ''Lewis acid strength'' of the dopant element and its scattering cross-section is also presented.

引用

页码：274 / 278

页数：5

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