HOT-ELECTRON EFFECTS IN SILICON-ON-INSULATOR N-CHANNEL MOSFET

[1] CHAM KH, 1986, COMPUT AIDED DESIGN, P240

[2] REDUCTION OF FLOATING SUBSTRATE EFFECT IN THIN-FILM SOI MOSFETS [J]. ELECTRONICS LETTERS, 1986, 22 (04) : 187 - 188

[3] HIGH-SPEED, LOW-POWER, IMPLANTED-BURIED-OXIDE CMOS CIRCUITS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) : 279 - 281

[4] Hu C., 1983, International Electron Devices Meeting 1983. Technical Digest, P176

[5] Ko P. K., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P88

[6] LIM HK, 1984, IEEE T ELECTRON DEV, V31, P401

[7] PINTO MR, 1984, PISCES 2 POISSON CON

[8] Poorter T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P100

[1] CHAM KH, 1986, COMPUT AIDED DESIGN, P240

[2] REDUCTION OF FLOATING SUBSTRATE EFFECT IN THIN-FILM SOI MOSFETS [J]. ELECTRONICS LETTERS, 1986, 22 (04) : 187 - 188

[3] HIGH-SPEED, LOW-POWER, IMPLANTED-BURIED-OXIDE CMOS CIRCUITS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) : 279 - 281

[4] Hu C., 1983, International Electron Devices Meeting 1983. Technical Digest, P176

[5] Ko P. K., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P88

[6] LIM HK, 1984, IEEE T ELECTRON DEV, V31, P401

[7] PINTO MR, 1984, PISCES 2 POISSON CON

[8] Poorter T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P100